(Nanowerk News) The magnetic, conductive and optical properties of complex oxides make them key to components of next-generation electronics used for data storage, sensing, energy technologies, ...

Researchers have developed a stacking technology for a magneto-resistive random access memory (MRAM) to separately form a single-crystal tunnel magnetoresistive (TMR) thin film and then bond it to a ...

A nanoelectronics research institute has announced that it has made significant progress with its 3D-SIC (3D stacked IC) technology. Scientists recently demonstrated the first functional 3D integrated ...

Advanced packaging can be an alphabet soup of possible approaches, from heterogenous integration of multiple die types into a single package, to three-dimensional stacking of multiple dies on top of ...

Bernin (France), June 3, 2025 – Soitec (Euronext – Tech Leaders), a world leader in the design and production of innovative semiconductor materials, today announced a strategic collaboration with ...

Jan. 24 (UPI) --Assembly of the Artemis II moon rocket has reached its latest milestone with the stacking of the twin boosters' right forward center segment, NASA announced Friday. The most recent ...

Intel's new CEO Lip Bu-Tan took to the stage at the company's Intel Foundry Direct 2025 event here in San Jose, California, to outline the company's progress on its foundry initiative. Tan announced ...

With the increased prevalence of generative AI, the demand for High Bandwidth Memory (HBM) is rapidly rising, leading to heightened competition in stacking. For HBMs, a higher stack means the ...