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Abstract: This article reports a new, low voltage (VCG=-6V, VDS=5V) and medium power punch-through assisted hot holes (PAHH) programming mechanism for thick tunnel oxide SONOS. The mechanism is meant ...
Abstract: A new memory redundancy technique using inverse-gate-electrode flash (ie-flash) memory cells has been developed. The ie-flash can be fabricated by the conventional logic CMOS process, so no ...
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