IEEE

First Demonstration of Double-Gate IGZO Transistors with Ideal Subthreshold Swing of 60 mV/dec at Room Temperature and 76 mV/dec at 380 K Over 5 Decades and gm Exceeding 1 mS ...

Abstract: In this work, contacted length scaling for atomic-layer-deposited IGZO transistors has been systematically investigated. The back-gate IGZO transistors with excellent reliability under high ...
IEEE

Experimental Demonstration of the Improved Single-Event Irradiation Hardness of Split-Gate 4H-SiC Power MOSFET With Integrated the P+N+ Structure

Abstract: In this work, the robust single-event irradiation-hardened capability is demonstrated in a novel 4H-SiC split gate integrated PN MOSFET (SGPN-MOSFET). The gate of the proposed SiC MOSFET was ...