Abstract: To assess the reliability of GaN power transistors, off-state leakage characteristic is measured for Schottky p-GaN gate HEMTs under negative gate biases. It is found that the drain leakage ...
Unlock the full potential of your smartphone camera. Discover 10 surprising Google Lens hacks that save time, solve problems, ...
Discover the old-school supermarket chain where the first barcode was scanned -- and how that single moment revolutionized ...
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